Transistor and method of making the same

ABSTRACT

The present invention provides an improved surface P-channel transistor and a method of making the same. A preferred embodiment of the method of the present invention includes providing a semiconductor substrate, forming a gate oxide layer over the semiconductor substrate, subjecting the gate oxide layer to a remote plasma nitrogen hardening treatment followed by an oxidative anneal, and forming a polysilicon layer over the resulting gate oxide layer. Significantly, the method of the present invention does not require nitrogen implantation through the polysilicon layer overlying the gate oxide and provides a surface P-channel transistor having a polysilicon electrode free of nitrogen and a hardened gate oxide layer characterized by a large concentration of nitrogen at the polysilicon electrode/gate oxide interface and a small concentration of nitrogen at the gate oxide/semiconductor substrate interface.

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a continuation of application Ser. No.09/585,688, filed Jun. 1, 2000, pending.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to semiconductor devices andmethods for their fabrication. Specifically, the present inventionrelates to surface P-channel transistors, including hardened gateoxides, possessing enhanced performance and reliability characteristics.

[0004] 2. State of the Art

[0005] Higher performance, enhanced reliability, and greater packagingdensity of integrated circuits are constant goals of the semiconductorindustry. However, as components become smaller and smaller to meetthese goals, it becomes increasingly difficult to produce semiconductordevices capable of reliable, long-term operation, particularly in lightof the operational stresses each component of a state of the artsemiconductor device must endure. For example, as state of the artsurface P-channel transistors decrease in size, the size and thicknessof the gate oxides included in these transistors must also decrease, butas gate oxides shrink, they become more permeable to dopants included inoverlying polysilicon electrodes, less resistant to hot electrondegradation, and more susceptible to breakdown at voltages below normaloperating parameters.

[0006] To combat such problems, various processes for hardening gateoxides have become essential to the fabrication of state of the artsemiconductor devices, and several hardening processes are well-known inthe art. For example, both furnace-based nitrogen processing and remoteplasma-based nitrogen hardening (“RPN”) may be used to harden gateoxides. Relative to nonhardened devices, gate oxides hardened by knownmethods are generally less permeable to dopants included in polysiliconelectrodes, more resistant to hot electron degradation, and lesssusceptible to breakdown at voltages below normal operating voltages.However, known processes for hardening gate oxides also have drawbacks.For example, after being subjected to such processes, gate oxides oftencontain a significant amount of unbound, or interstitial, nitrogen,which is mobile and may diffuse out of the gate oxide, reducing theeffectiveness of the hardening procedure and contaminating the overlyingpolysilicon electrode. Further, in order to prevent diffusion of dopantsfrom the polysilicon electrode and into and through the gate oxide,known hardening processes often provide a high concentration of nitrogenat the interface of the gate oxide and the underlying semiconductorsubstrate. However, as is known, excessive nitrogen at the gateoxide/substrate interface significantly degrades transistor performance.

[0007] In terms of device performance and reliability, it has been foundto be advantageous to fabricate a gate oxide having a large nitrogenconcentration (about 2.5% or greater nitrogen by atomic weight) at theinterface of the gate oxide and the overlying polysilicon electrodewhile having a small nitrogen concentration (about 0.5% nitrogen byatomic weight) at the gate oxide/substrate interface. The large nitrogenconcentration at the polysilicon electrode/gate oxide interfaceeffectively prevents diffusion of dopants from the polysilicon electrodeand into and through the gate oxide, while the small nitrogenconcentration at the gate oxide/substrate interface confers resistanceto hot electron degradation without substantially effecting deviceperformance. Yet known processing techniques do not reliably providesurface P-channel transistors including a gate oxide having a largenitrogen concentration at the polysilicon electrode/gate oxide interfaceand a small nitrogen concentration at the gate oxide/substrateinterface.

[0008] At least one method has been developed in an attempt to provide atransistor including a gate oxide having similar characteristics. U.S.Pat. No. 6,017,808 to Wang et al. (hereinafter “the '808 patent”)describes a method for hardening a gate oxide designed to provide atransistor wherein a large peak of nitrogen exists within thepolysilicon and oxide layers at the interface of the gate oxide and theoverlying polysilicon electrode, while a relatively smaller nitrogenpeak occurs within the oxide layer and the underlying semiconductorsubstrate at the interface of the gate oxide and the underlyingsemiconductor substrate. To achieve this structure, the method of the'808 patent requires implanting nitrogen through the polysilicon layerand into the gate oxide layer followed by an anneal step. After theimplantation and annealing steps, a first nitrogen peak occurs entirelywithin the polysilicon layer, a second nitrogen peak occurs within thepolysilicon layer and the gate oxide at the polysilicon/gate oxideinterface, and a third nitrogen peak occurs within the gate oxide layerand underlying substrate at the gate oxide/substrate interface. However,the first nitrogen peak located entirely within the polysilicon layer isproblematic because it retards diffusion of subsequently implanteddopants, such as boron, within the polysilicon layer. Therefore, themethod of the '808 patent requires removal of only the portion of thepolysilicon layer including the first nitrogen peak without removing theportion of the polysilicon layer including the second nitrogen peak.Once the portion of the polysilicon layer including the first nitrogenpeak is removed, an additional, nitrogen-free polysilicon layer may beoptionally formed over the remaining portion of the nitrogen implantedpolysilicon layer.

[0009] As will be readily appreciated, achieving the structure disclosedin the '808 patent using the methods described therein is at bestproblematic, particularly in light of the continually decreasingthicknesses of polysilicon electrodes included in state of the artsemiconductor devices. One of the most problematic aspects of the methoddescribed in the '808 patent is the need to remove only the portion ofthe nitrogen implanted polysilicon layer including the first nitrogenpeak. The reference teaches that this task may be accomplished usingknown wet etch, dry etch, or chemical mechanical polishing processes.However, the polysilicon layers used for polysilicon electrodes in stateof the art transistors are exceedingly thin. The polysilicon electrodesof some state of the art devices may be as thin as seven or fewermolecular monolayers, and known etching and polishing processes aredifficult to control with sufficient precision to remove onlypredetermined portions of material layers of such minute thicknesses.Moreover, in this context, the polysilicon layer will include varyingconcentrations of nitrogen at any given depth, and as the nitrogenconcentration varies, the etch rate will also vary, making precisecontrol of the etching process even more difficult. Thus, removing onlythe portion of the polysilicon layer including the first nitrogen peakis extremely difficult, and known removal processes will most likelyresult in removal of too much or too little polysilicon material,resulting in transistors exhibiting impaired performance or reducedreliability.

[0010] It would, therefore, be desirable to provide a method forfabricating a surface P-channel transistor which provides a surfaceP-channel transistor including a hardened gate oxide characterized by alarge nitrogen concentration at the polysilicon/gate oxide interface anda small nitrogen concentration at the gate oxide/substrate interface,and which can be accomplished without the need to partially remove thepolysilicon layer overlying the gate oxide. Ideally, such a method couldbe easily incorporated into current fabrication processes and wouldreliably produce state of the art surface P-channel transistorsexhibiting enhanced performance and reliability.

SUMMARY OF THE INVENTION

[0011] The method and device of the present invention answer theforegoing needs. In a preferred embodiment, the present inventionincludes a method for forming improved surface P-channel transistorsincluding providing a semiconductor substrate and forming a gate oxidelayer over the semiconductor substrate. According to the method of thepresent invention, the gate oxide layer is subjected to a RPN treatment,which incorporates a high concentration of nitrogen into an upper areaof the gate oxide layer. Following the RPN treatment, the resultantintermediate structure is annealed in an environment including anoxygen-containing or nitrogen-containing oxidant. The anneal stepsmooths out the distribution of nitrogen within the gate oxide layer,reacts substantially all of the unbound or interstitial nitrogen leftafter the RPN treatment, and results in a gate oxide layer having alarge concentration of nitrogen near its upper surface and a smallconcentration of nitrogen at the interface of the gate oxide layer andthe underlying semiconductor substrate. Following the oxidative anneal,a polysilicon layer is formed over the gate oxide layer, and theresultant intermediate structure may be processed by known fabricationtechniques to define one or more surface P-channel transistors as wellas any other feature necessary to the proper function of a desiredsemiconductor device.

[0012] In an alternative embodiment, the gate oxide layer formed overthe semiconductor substrate may be formed in a nitrogen-containingenvironment to provide a gate oxide layer including a smallconcentration of nitrogen throughout its depth. The lightly nitridatedgate oxide layer is then subjected to a RPN treatment, resulting in agate oxide layer having a large concentration of nitrogen near its uppersurface and a smaller concentration of nitrogen at the interface of thegate oxide layer and the underlying semiconductor substrate. Once theRPN treatment is complete, the resultant intermediate structure may beprocessed by known fabrication techniques to define one or more surfaceP-channel transistors as well as any other feature necessary to theproper function of a semiconductor device.

[0013] As can be easily appreciated, the method of the present inventionenables fabrication of surface P-channel transistors including hardenedgate oxides characterized by a large concentration of nitrogen at itsupper surface and a small concentration of nitrogen at the interface ofthe gate oxide layer and the underlying semiconductor substrate.Moreover, the method of the present invention does not involve nitrogenimplantation of the oxide layer through an overlying polysilicon layer,and, as a result, does not require partial removal of a specific portionof the polysilicon layer for fabrication of a functioning and reliablepolysilicon electrode. Finally, the method of the present invention iseasily incorporated into processes for fabricating state of the artsemiconductor devices, and because it does not require partial removalof the polysilicon electrode layer, the method of the present inventionmay be applied even as feature dimensions of state of the artsemiconductor devices continue to decrease.

[0014] The surface P-channel transistors of the present invention areproduced by the method of the present invention and include asemiconductor substrate, a substantially nitrogen-free polysiliconelectrode, and a hardened gate oxide characterized by a largeconcentration of nitrogen at its upper surface and a small concentrationof nitrogen at the gate oxide/substrate interface. Due to the physicalcharacteristics of its hardened gate oxide, the surface P-channeltransistor of the present invention exhibits performance and reliabilityadvantages over known devices. For example, the surface P-channeltransistor of the present invention does not exhibit the disadvantageousroll-off characteristics of surface channel transistors including gateoxides having a large concentration of nitrogen at the gateoxide/substrate interface, yet the surface P-channel transistor of thepresent invention possesses a greatly enhanced extrapolated timedependent dielectric breakdown (“TDDB”). Additionally, the gate oxide ofa surface P-channel transistor according to the present inventionpreferably includes substantially no unbound or interstitial nitrogen.Therefore, the improved surface P-channel transistor of the presentinvention avoids many of the difficulties associated with known surfacechannel transistors including nitrogen hardened gate oxides.

[0015] Other features and advantages of the present invention willbecome apparent to those of skill in the art through consideration ofthe ensuing description, the accompanying drawings, and the appendedclaims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0016] The drawings presented in conjunction with the description of thepresent invention are not actual views of any particular portion of anactual semiconducting device or component, but are merelyrepresentations employed to more clearly and fully depict the presentinvention.

[0017]FIG. 1 illustrates a semiconductor substrate covered by a gateoxide layer having an upper surface;

[0018]FIG. 2 illustrates the structure of FIG. 1 after such structurehas been subjected to a RPN treatment;

[0019]FIG. 3 provides a graph illustrating the results of a bindingenergy analysis performed on a gate oxide layer after the gate oxidelayer was subjected to a RPN treatment;

[0020]FIG. 4 provides a graph illustrating the results of a bindingenergy analysis performed on a gate oxide layer after the gate oxidelayer was subjected to a RPN treatment and annealed in an N₂environment;

[0021]FIG. 5 illustrates an intermediate semiconductor structureincluding a semiconductor substrate and a hardened gate oxide layer;

[0022]FIG. 6 illustrates another intermediate semiconductor structurecreated by forming a polysilicon layer over the hardened gate oxidelayer of the intermediate structure illustrated in FIG. 5; and

[0023]FIG. 7 illustrates one embodiment of the surface P-channeltransistor of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0024] The method of the present invention is relatively simple, may beeasily incorporated into existing fabrication processes, and reliablyproduces a surface P-channel transistor including a gate oxide thatenhances device performance and longevity.

[0025] In a preferred embodiment, the method of the present inventionincludes providing a semiconductor substrate 10 having a gate oxidelayer 12 formed there over, as is illustrated in drawing FIG. 1. Thesemiconductor substrate 10 may be made of any suitable material known inthe art, and the gate oxide layer 12 can be formed over thesemiconductor substrate 10 using any known process using any suitablematerial known in the art. For example, the semiconductor substrate 10may be fabricated using silicon and the gate oxide layer 12 may includesilicon dioxide (SiO₂) which has been thermally grown or vapor depositedusing well-known methods. The gate oxide layer 12 includes an uppersurface 13 and may be formed in various thicknesses to suit variousfabrication processes. The gate oxide layer 12, however, will generallyhave a thickness of about 70 Å or less, and for use in state of the art0.18 μm technology, a gate oxide layer 12 having a thickness in therange of about 30 Å to 50 Å is preferred.

[0026] After provision of the semiconductor substrate 10 having the gateoxide layer 12 formed there over, the gate oxide layer 12 is subjectedto a RPN treatment. The RPN treatment incorporates nitrogen into anupper area 14 (depicted in FIG. 2) of the gate oxide layer 12, resultingin a large concentration of nitrogen at the upper surface 13 of the gateoxide layer 12. As is shown in drawing FIG. 3, a graph of a bindingenergy analysis of the gate oxide layer 12 after the RPN treatment, thenitrogen-containing upper area 14 of the gate oxide layer 12 includesunbound or interstitial nitrogen (indicated by the oxy-nitride peak 16)as well as silicon nitride (Si₃N₄) (indicated by the nitride peak 18).

[0027] RPN treatments are well documented in the art, and, as will beappreciated by the skilled artisan, any suitable RPN treatment may beused in the context of this invention. For example, a thermal RPNtreatment using microwave plasma to excite the nitrogen moleculesincluded in the process environment may be conducted at substantially750° C. for approximately two minutes. However, a high density plasma(HDP) RPN treatment is presently preferred.

[0028] Where a HDP RPN is used, the process may be conducted at betweenabout substantially 60° C. and 65° C. for about 10 seconds using 1500watts power. Where a gate oxide layer having a thickness ofsubstantially 30 Å is subjected to such an HDP RPN treatment, thehighest concentration of nitrogen (approximately 20.5% by atomic weight)will occur at the upper surface 13 of the gate oxide layer 12, but thenitrogen will only extend approximately substantially 9Å within thesubstantially 30 Å gate oxide layer. Therefore, the RPN treatmentincorporates nitrogen in only the upper area 14 of the gate oxide layer12.

[0029] As has been discussed, however, it is highly desirable to includea small concentration of nitrogen at the interface of the gate oxidelayer 12 and the semiconductor substrate 10. In order to moreprogressively distribute, or “smooth out,” the nitrogen concentrationwithin the gate oxide layer 12, the intermediate structure 20 (shown indrawing FIG. 2) formed by the RPN treatment is annealed in anenvironment containing either an oxygen-containing oxidant or anitrogen-containing oxidant. For example, the anneal may be conducted inan N₂ environment at substantially 800° C. for 60 seconds. However,various anneal processes are known in the art, and different annealprocesses executed in different reactive environments, such as N₂O or NOenvironments, may also be used in the context of the present inventionto achieve the desired results.

[0030] Even after the anneal, the upper area 14 of the gate oxide layer12 includes a high concentration of nitrogen. However, during theanneal, the nitrogen is progressively incorporated throughout the depth21 of the gate oxide layer 12, resulting in a small concentration ofnitrogen at the interface 15 of the gate oxide layer 12 and thesemiconductor substrate 10. Most preferably, the small concentration ofnitrogen at the gate oxide layer/semiconductor substrate interface 15will equal an atomic concentration of about 0.5%. If significantly morenitrogen is included at the gate oxide layer/semiconductor substrateinterface 15, the resulting transistor will exhibit increasing thresholdvoltage (V_(T)) roll-off, and if significantly less nitrogen is includedat the gate oxide layer/semiconductor substrate interface 15, the gateoxide will be more susceptible to hot electron degradation and theresulting transistor will exhibit a lower TDDB. Additionally, though thelarge nitrogen concentration of the upper area 14 of the gate oxidelayer 12 may vary significantly, it is preferred that the concentrationof nitrogen at the upper surface 13 of the gate oxide layer 12 be atleast about five times greater than the small nitrogen concentrationincluded at the gate oxide layer/semiconductor substrate interface 15,as it has been determined that such a concentration is necessary toeffectively block dopant diffusion from the polysilicon electrode andinto and through the upper area 14 of the gate oxide layer 12.

[0031] As can be appreciated by reference to drawing FIG. 3 and drawingFIG. 4, annealing the intermediate structure 20 resulting from the RPNtreatment has an additional advantage. As already discussed, drawingFIG. 3 provides a graph of a binding energy analysis of the gate oxidelayer 12 immediately following the RPN treatment. Again, as isdemonstrated by the oxy-nitride peak 16 and the nitride peak 18 shown indrawing FIG. 3, following the RPN treatment, the nitrogen-containingupper area 14 of the gate oxide layer 12 includes unbound orinterstitial nitrogen as well as Si₃N₄. As is evidenced by theinformation provided in drawing FIG. 4, however, after annealing theintermediate structure 20, the gate oxide layer 12 no longer includes asignificant amount of interstitial nitrogen (indicated by the lack of asignificant oxy-nitride peak) but includes an increased amount of Si₃N₄,as is indicated by a second nitride peak 22. Thus, annealing the firstintermediate structure 20 results in a second intermediate structure 24(depicted in drawing FIG. 5) including a semiconductor substrate 10 anda hardened gate oxide layer 26 characterized by a large concentration ofnitrogen at the upper surface 28, a small concentration of nitrogen atthe hardened gate oxide layer/semiconductor substrate interface 30, andsubstantially no unbound or interstitial nitrogen.

[0032] Following the anneal step, a third intermediate structure 31(illustrated in drawing FIG. 6) is formed by forming a polysilicon layer32 over the hardened gate oxide layer 26. The polysilicon layer 32 isformed using any known process and may also be doped with boron or otherknown dopants such that the polysilicon layer 32 can be used to formpolysilicon electrodes with desired electrical properties. The thirdintermediate structure 31 is then processed as is known in the art toproduce a semiconductor device including at least one surface P-channeltransistor which incorporates a portion of the hardened gate oxide layer26 for a gate oxide as well as a portion of the overlying polysiliconlayer 32 for a polysilicon electrode.

[0033] The preferred embodiment of the method of the present invention,therefore, provides an enhanced surface P-channel transistor. The gateoxide produced by the method of the present invention prevents diffusionof dopant from the overlying polysilicon electrode, resists hot electrondegradation without adverse V_(T) roll-off effects, exhibits enhancedresistance to breakdown below normal operating voltages, and results ina surface P-channel transistor having a greatly increased TDDB. In fact,while transistors incorporating gate oxides hardened by RPN alone havean extrapolated TDDB of approximately 8 years, the method of thepreferred embodiment of the method of the present invention provides asurface P-channel transistor having an extrapolated TDDB of 500 years.

[0034] In an alternative embodiment of the method of the presentinvention, the hardened gate oxide layer is formed using a differentprocess. Instead of subjecting the gate oxide layer to a RPN treatmentfollowed by an anneal, the gate oxide layer is formed in anitrogen-containing environment to provide a slightly nitridated gateoxide layer, which is subsequently subjected to a RPN treatment toachieve a high concentration of nitrogen in an upper area of the gateoxide layer. The lightly nitridated gate oxide layer may be formed byexecuting a known oxide deposition or growth process in anitrogen-containing environment, but for reasons already discussed, thelightly nitridated gate oxide layer should not include more than about0.5% nitrogen by atomic weight. Moreover, as with the preferredembodiment of the method of the present invention, any suitable RPNtreatment known in the art may be used. The hardened gate oxide layerformed in the alternative embodiment of the method of the presentinvention, therefore, will include a small concentration of nitrogen (nomore than about 0.5%) at the interface of the hardened gate oxide andthe underlying semiconductor substrate, as well as a high concentrationof nitrogen at its upper surface due to the RPN treatment.

[0035] The alternative embodiment of the method of the present inventionalso includes forming a polysilicon layer over the hardened gate oxidelayer. As was the case in the preferred embodiment of the method of thepresent invention, following formation of the polysilicon layer, theresultant intermediate structure may be processed as is known in the artto produce a semiconductor device including at least one surfaceP-channel transistor which incorporates a portion of the hardened gateoxide layer for a gate oxide as well as a portion of the overlyingpolysilicon layer for a polysilicon electrode. However, the alternativeembodiment of the method of the present invention is not preferredbecause the gate oxide layer formed in the alternative embodimentincludes a significant amount of interstitial nitrogen due to the lackof a post RPN anneal.

[0036] Nevertheless, as will be apparent to the skilled artisan, themethod of the present invention does not involve nitrogen implantationinto the gate oxide layer through an overlying polysilicon layer. Themethod of the present invention, therefore, does not necessitate thepartial removal of the overlying polysilicon layer to facilitatefabrication of a high-performance, reliable polysilicon electrode. As aresult, the method of the present invention provides a more reliable andeasily executed technique for forming an enhanced surface P-channeltransistor, particularly when the ever-shrinking dimensions of state ofthe art semiconductor device features are considered.

[0037] The present invention also includes the enhanced surfaceP-channel transistor 37 produced by the method of the present invention.As is illustrated in drawing FIG. 7, a surface P-channel transistor 37of the present invention includes a semiconductor substrate 38, a gateoxide 40, and a polysilicon electrode 42 overlying the gate oxide 40.The gate oxide 40 includes a large concentration of nitrogen (i.e.,approximately 2.5% or more nitrogen by atomic weight) near the interface44 of the polysilicon electrode 42 and the gate oxide 40, and the gateoxide 40 includes a small concentration of nitrogen (i.e., approximately0.5% nitrogen by atomic weight) at the interface 46 of gate oxide 40 andthe underlying semiconductor substrate 38. It should be understoodhowever, that the surface P-channel transistor 37 of the presentinvention is not limited to the features detailed herein and may includeother well-known features. Moreover, the surface P-channel transistor 37can be fabricated in various sizes to suit virtually any application.

[0038] Due to the physical characteristics of the gate oxide 40incorporated therein, the surface P-channel transistor 37 of the presentinvention shows enhanced performance and reliability. The gate oxide 40of the surface P-channel transistor 37 of the present invention providesa transistor that possesses enhanced resistance to hot electrondegradation, less susceptibility to breakdown below normal operatingvoltages, substantially no V_(T) roll-off, and an extrapolated TDDB of500 years. Moreover, in contrast to the surface channel transistorformed by the method of the '808 patent, the polysilicon electrode 42overlying the gate oxide 40 of the surface P-channel transistor 37 ofthe present invention is nitrogen-free, allowing for more effectivedistribution of the dopants. Therefore, the surface P-channel transistor37 of the present invention not only exhibits enhanced performance andreliability, but the surface P-channel transistor 37 of the presentinvention will not suffer from performance problems associated withdopant depletion regions in the polysilicon electrode 42 which mayresult from nitrogen implanted into and through the polysilicon layer.

[0039] Though the surface P-channel transistor and method of the presentinvention have been described herein with reference to specificexamples, such examples are for illustrative purposes only. The scope ofthe present invention is defined by the appended claims and is,therefore, not limited by the preceding description and drawings.

What is claimed is:
 1. A fabrication method for a surface P-channeltransistor on a substrate, comprising: forming an oxide layer over atleast portions of said substrate, said oxide layer having an upperportion and an interface with said substrate; hardening said oxide layerusing a remote plasma-based nitrogen hardening (“RPN”) treatment forincorporating nitrogen into at least the upper portion of said oxidelayer; annealing said oxide layer following said RPN treatment, saidoxide layer having a concentration of nitrogen in the upper portionthereof about at least five times greater than the nitrogenconcentration at the interface of said oxide layer and said substrate;and; forming a polysilicon layer over said oxide layer.
 2. Thefabrication method of claim 1, wherein said substrate comprises asilicon substrate.
 3. The fabrication method of claim 1, wherein formingsaid oxide layer over said substrate comprises thermally growing saidoxide layer from said silicon substrate.
 4. The fabrication method ofclaim 1, wherein forming said oxide layer over at least portions of saidsubstrate comprises depositing an oxide layer over at least portions ofsaid substrate.
 5. The fabrication method of claim 1, wherein hardeningsaid oxide layer using said RPN treatment comprises hardening said oxidelayer using a high density plasma (“HDP”) RPN treatment.
 6. Thefabrication method of claim 5, wherein hardening said oxide layer usingsaid HDP RPN treatment comprises hardening said oxide layer using an HDPRPN process for approximately 60° C. for about 10 seconds using about1500 watts of power.
 7. The fabrication method of claim 1, whereinhardening said oxide layer using said RPN treatment comprises hardeningsaid oxide layer using a thermal RPN treatment.
 8. The fabricationmethod of claim 7, wherein hardening said oxide layer using said thermalRPN treatment comprises hardening said oxide layer using a thermal RPNtreatment for approximately 750° C. for about 2 minutes.
 9. Thefabrication method of claim 1, wherein annealing said oxide layerfollowing said RPN treatment comprises annealing said oxide layer in anenvironment comprising an oxidant including nitrogen.
 10. Thefabrication method of claim 9, wherein annealing said oxide layer insaid environment comprising said oxidant including nitrogen furthercomprises annealing said oxide layer at approximately 800° C. forapproximately 60 seconds.
 11. The fabrication method of claim 1, furthercomprising doping said polysilicon layer over said oxide layer.
 12. Thefabrication method of claim 11, wherein doping said polysilicon layerover said oxide layer comprises doping said polysilicon layer with aP-type dopant.
 13. A fabrication method for a semiconductor memorydevice on a substrate comprising: forming an oxide layer over at leastportions of said substrate, said oxide layer having an upper portion andan interface with said substrate; hardening said oxide layer using a RPNtreatment for incorporating nitrogen into at least the upper portion ofsaid oxide layer; annealing said oxide layer following said RPNtreatment, said oxide layer having a concentration of nitrogen in theupper portion thereof about at least five times greater than thenitrogen concentration at the interface of said oxide layer and saidsubstrate; and; creating at least one surface P-channel transistorincluding at least a portion of said oxide layer.
 14. A fabricationmethod for a surface P-channel transistor on a substrate, comprising:forming an oxide layer over at least portions of said substrate in anitrogen-containing environment, said oxide layer having an upperportion and an interface with said substrate; hardening said oxide layerusing a RPN treatment for incorporating nitrogen into at least the upperportion of said oxide layer, the upper portion of said oxide layerhaving concentration of nitrogen therein varying from about at leastfive times greater than the nitrogen concentration at the interface ofsaid oxide layer and said substrate; and forming at least one surfaceP-channel transistor including at least a portion of said oxide layer.15. The fabrication method of claim 14, wherein forming said oxide layerover at least portions of said substrate in said nitrogen-containingenvironment comprises forming an oxide layer in an environmentcontaining sufficient nitrogen to provide an oxide layer comprisingapproximately 0.5% nitrogen in the portion of said oxide layer adjacentthe interface of said oxide layer and said substrate.
 16. Thefabrication method of claim 15, wherein hardening said oxide layer usingsaid RPN treatment comprises hardening said oxide layer using an HDP RPNprocess for approximately 60° C. for about 10 seconds using about 1500watts of power.
 17. The fabrication method of claim 15, whereinhardening said oxide layer using said RPN treatment comprises hardeningsaid oxide layer using a thermal RPN treatment run at approximately 750°C. for about 2 minutes.